型号/品牌/封装
品类/描述
库存
价格(含税)
资料
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品类: TRIACs描述: 8A双向可控硅 8A TRIACS84725+￥4.117525+￥3.812550+￥3.5990100+￥3.5075500+￥3.44652500+￥3.37035000+￥3.339810000+￥3.2940 -
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品类: TRIACs描述: STMICROELECTRONICS T435-600B 三端双向可控硅, 600 V, TO-252, 30 A88365+￥5.953525+￥5.512550+￥5.2038100+￥5.0715500+￥4.98332500+￥4.87315000+￥4.829010000+￥4.7628 -
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品类: MOS管描述: N沟道500V - 0.47Ω - 7.5A - TO- 220 - TO- 220FP - IPAK - DPAK第二代的MDmesh ？功率MOSFET N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh? Power MOSFET116410+￥8.6280100+￥8.1966500+￥7.90901000+￥7.89462000+￥7.83715000+￥7.76527500+￥7.707710000+￥7.6789 -
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品类: MOS管描述: N 通道 MDmesh™，500V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics62495+￥2.659525+￥2.462550+￥2.3246100+￥2.2655500+￥2.22612500+￥2.17695000+￥2.157210000+￥2.1276 -
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品类: MOS管描述: N 通道 MDmesh™，600V/650V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics950410+￥6.3000100+￥5.9850500+￥5.77501000+￥5.76452000+￥5.72255000+￥5.67007500+￥5.628010000+￥5.6070 -
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品类: MOS管描述: STMICROELECTRONICS STD6N95K5 功率场效应管, MOSFET, N沟道, 9 A, 950 V, 1 ohm, 10 V, 4 V44615+￥3.793525+￥3.512550+￥3.3158100+￥3.2315500+￥3.17532500+￥3.10515000+￥3.077010000+￥3.0348 -
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品类: MOS管描述: N 通道 STripFET™，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics74885+￥4.725025+￥4.375050+￥4.1300100+￥4.0250500+￥3.95502500+￥3.86755000+￥3.832510000+￥3.7800 -
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品类: MOS管描述: N 通道 MDmesh™ K5 系列，SuperMESH5™, STMicroelectronics ### MOSFET 晶体管，STMicroelectronics77105+￥6.183025+￥5.725050+￥5.4044100+￥5.2670500+￥5.17542500+￥5.06095000+￥5.015110000+￥4.9464 -
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品类: MOS管描述: STMICROELECTRONICS STD17NF25 晶体管, MOSFET, N沟道, 8.5 A, 250 V, 140 mohm, 10 V, 3 V858910+￥7.5120100+￥7.1364500+￥6.88601000+￥6.87352000+￥6.82345000+￥6.76087500+￥6.710710000+￥6.6857 -
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品类: MOS管描述: N 通道 STripFET™ DeepGate™，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics906310+￥1.282550+￥1.2160100+￥1.1685300+￥1.1400500+￥1.11151000+￥1.08302500+￥1.04035000+￥1.0308 -
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品类: MOS管描述: N-沟道 600 V 3.5 A 1.4 Ohm 表面贴装 MDmesh II Plus Mosfet - DPAK323610+￥8.8800100+￥8.4360500+￥8.14001000+￥8.12522000+￥8.06605000+￥7.99207500+￥7.932810000+￥7.9032 -
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品类: MOS管描述: N沟道250V， 0.14 I© ， 17的低栅极电荷STripFETâ ?? ¢ II功率MOSFET的D2PAK和DPAK封装 N-channel 250 V, 0.14 Ω, 17 A low gate charge STripFET⢠II Power MOSFET in D2PAK and DPAK packages734910+￥8.6280100+￥8.1966500+￥7.90901000+￥7.89462000+￥7.83715000+￥7.76527500+￥7.707710000+￥7.6789 -
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品类: MOS管描述: 晶体管, MOSFET, N沟道, 6 A, 900 V, 0.91 ohm, 10 V, 4 V763010+￥9.5280100+￥9.0516500+￥8.73401000+￥8.71812000+￥8.65465000+￥8.57527500+￥8.511710000+￥8.4799 -
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品类: MOS管描述: MOSFET 晶体管，STMicroelectronics718210+￥7.9080100+￥7.5126500+￥7.24901000+￥7.23582000+￥7.18315000+￥7.11727500+￥7.064510000+￥7.0381 -
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品类: MOS管描述: INFINEON SPD18P06P 晶体管, MOSFET, P沟道, 18.6 A, -60 V, 130 mohm, -10 V, 20 V358510+￥8.7240100+￥8.2878500+￥7.99701000+￥7.98252000+￥7.92435000+￥7.85167500+￥7.793410000+￥7.7644 -
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品类: 双极性晶体管描述: ON SEMICONDUCTOR MJD340T4G 单晶体管 双极, 通用, NPN, 300 V, 10 MHz, 1.56 W, 500 mA, 30 hFE54485+￥2.065525+￥1.912550+￥1.8054100+￥1.7595500+￥1.72892500+￥1.69075000+￥1.675410000+￥1.6524 -
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品类: MOS管描述: Trans MOSFET N-CH 40V 119A 3Pin(2+Tab) DPAK T/R419410+￥6.8400100+￥6.4980500+￥6.27001000+￥6.25862000+￥6.21305000+￥6.15607500+￥6.110410000+￥6.0876 -
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品类: MOS管描述: FDD6637 系列 35 V 11.6 mOhm P 沟道 PowerTrench Mosfet TO-25237875+￥5.130025+￥4.750050+￥4.4840100+￥4.3700500+￥4.29402500+￥4.19905000+￥4.161010000+￥4.1040 -
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品类: IGBT晶体管描述: IGBT 分立，STMicroelectronics ### IGBT 分立件和模块，STMicroelectronics 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。1817 -
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品类: MOS管描述: N沟道 40V 20A37615+￥2.335525+￥2.162550+￥2.0414100+￥1.9895500+￥1.95492500+￥1.91175000+￥1.894410000+￥1.8684 -
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品类: MOS管描述: MOSFET 150V 1 N-CH HEXFET 32mOhms 60NC428410+￥9.4800100+￥9.0060500+￥8.69001000+￥8.67422000+￥8.61105000+￥8.53207500+￥8.468810000+￥8.4372 -
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品类: MOS管描述: Trans MOSFET N-CH 55V 71A 3Pin(2+Tab) DPAK T/R88195+￥12.998750+￥12.4432200+￥12.1321500+￥12.05441000+￥11.97662500+￥11.88775000+￥11.83227500+￥11.7766
